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TC7S04FU - Inverter

Features

  • High speed: tpd = 7 ns (typ. ) at VCC = 5 V.
  • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min).
  • Output drive capability: 5 LSTTL loads.
  • Symmetrical output impedance: |IOH| = IOL = 2 mA (min).
  • Balanced propagation delays: tpLH ∼.
  • tpHL.
  • Wide operating voltage range: VCC (opr) = 2 to 6 V TC7S04FU Absolute Maximum Ratings (Ta = 25°C) Weight SSOP5-P-0.95: 0.016 g (typ. ) SSOP5.

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Other Datasheets by Toshiba

Part Number Description
TC7S04F Inverter
TC7S00F 2-Input NAND Gate
TC7S00FU 2-Input NAND Gate
TC7S02F 2-Input NOR Gate
TC7S02FU 2-INPUT NOR GATE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S04F, TC7S04FU Inverter TC7S04F/FU The TC7S04 is a high speed C2MOS Inverter fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The input is equipped with protection circuits against static discharge or transient excess voltage. Output currents are 1/2 compared to TC74HC series models. TC7S04F Features • High speed: tpd = 7 ns (typ.
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