TC7S66FU Datasheet | Toshiba

Features - High speed: tpd = 7 ns (typ.) @VCC = 5 V - Low power dissipation: ICC = 1 μA (max) @Ta = 25°C - High noise immunity: VNIH = VNIL = 28% VCC (min) - Low ON resistance: RON = 100 Ω (typ.) @VCC = 9 V - Low T.H.D: THD = 0.05% (typ.) @VCC = 5 V - Pin and function patible with TC4S66F Absolute Maximum Ratings (Ta = 25°C) TC7S66F Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Characteristics Symbol Rating Unit DC Supply voltage Control input voltage Switch I/O voltage Control diode current I/O diode current Through I/O current DC VCC/ground current Power dissipation Storage temperature range Lead temperature (10 s) VCC VIN VI/O ICK IIOK IT ICC PD Tstg TL - 0.5 to 13 - 0.5 to VCC + 0.5 - 0.5 to VCC + 0.5 ±20 m A ±20 m A ±12.5 m A ±25 m A 200 m W - 65 to 150 °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of mercial production 1991-06 2014-03-01 Marking E9 Part...