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TC7SG00FU - 2-Input NAND Gate

Features

  • High output current: ±8 mA (min) at VCC = 3 V.
  • High-speed operation: tpd = 2.5 ns (typ. ) at VCC = 3.3 V,15pF.
  • Operating voltage range: VCC = 0.9 to 3.6 V.
  • 5.5-V tolerant inputs.
  • 3.6-V power down protection output. Marking W1 Product name Weight: 0.006 g (typ. ) Pin Assignment (top view) IN B 1 5 VCC IN A 2 (USV) GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage.

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Full PDF Text Transcription

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TC7SG00FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG00FU 2 Input NAND Gate Features • High output current: ±8 mA (min) at VCC = 3 V • High-speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. Marking W1 Product name Weight: 0.006 g (typ.) Pin Assignment (top view) IN B 1 5 VCC IN A 2 (USV) GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC −0.5 to 4.6 V VIN −0.5 to 7.0 V −0.5 to 4.6 (Note 1) VOUT V −0.5 to VCC + 0.
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