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TC7WG00FC - Dual 2-Input NAND Gate

Features

  • High output current : ±8 mA (min) at VCC = 3 V.
  • Super high speed operation : tpd = 2.5 ns (typ. ) at VCC = 3.3 V, 15pF.
  • Operating voltage range : VCC = 0.9 to 3.6 V.
  • 5.5-V tolerant inputs.
  • 3.6-V power down protection outputs (CST8) Weight: 0.002 g (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VC.

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Datasheet preview – TC7WG00FC

Datasheet Details

Part number TC7WG00FC
Manufacturer Toshiba
File Size 213.12 KB
Description Dual 2-Input NAND Gate
Datasheet download datasheet TC7WG00FC Datasheet
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Full PDF Text Transcription

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TC7WG00FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG00FC Dual 2-Input NAND Gate Features • High output current : ±8 mA (min) at VCC = 3 V • Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3 V, 15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs • 3.6-V power down protection outputs (CST8) Weight: 0.002 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/GND current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 4.6 V −0.5 to 7.0 V −0.5 to 4.6 (Note1) V −0.5 to VCC+0.
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