TC7WG08FC
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG08FC
Dual 2-Input AND Gate
Features
• High output current
: ±8 mA (min) at VCC = 3 V
• Super high speed operation: tpd = 2.5 ns (typ.)
at VCC = 3.3 V,15pF
• Operating voltage range : VCC = 0.9 to 3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
TC7WG08FC
Weight: 0.002 g (typ.)
(CST8)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Symbol
VCC
VIN
VOUT
Rating
Unit
−0.5 to 4.6
V
−0.5 to 7.0
V
−0.5 to 4.6 (Note1)
V
−0.5 to VCC+0.5 (Note2)
Input diode current
Output diode current
DC output current
DC VCC/GND current
Power dissipation
Storage temperature
IIK
IOK
IOUT
ICC
PD
Tstg
−20
mA
−20 (Note3) mA
±25
mA
±50
mA
150 (Note4) mW
−65 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: VCC = 0 V
Note 2: High or Low State.
Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
Note 4: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 11.56 mm2)
1
Marking
G08
Product name
Pin Assignment (top view)
VCC 1Y 2B 2A
8 765
123 4
1A 1B 2Y GND
Start of commercial production
2006-03
2014-03-01
