Description
The TH58NVG3S0HTAI0 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks.
Features
- Organization
Memory cell array Register Page size Block size
x8 4352 128K 8 2 4352 8 4352 bytes (256K 16K) bytes.
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
- Mode control Serial input/output
Command control.
- Number of valid blocks Min 4016 blocks Max 4096 blocks.
- Power supply VCC 2.7V to 3.6V.
- Access time
Cell array to register 25 s max.
TH58NVG3S0HTAI0 Datasheet
