TH58NVG3S0HBAI6 Datasheet | Toshiba

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes  16 Kbytes: 4352 bytes  64 pages). The TH58NVG3S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. Features - Organization x8 Memory cell array 4352  128K  8  2 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes - Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read - Mode control Serial input/output mand control - Number of valid blocks Min 4016 blocks Max 4096 blocks - Power supply VCC  2.7V to 3.6V - Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50p F) - Program/Erase time Auto Page Program Auto Block Erase 300 s/page typ. 2.5 ms/block typ. - Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 m A max. 30 m A max 30 m A max 100 A max - Package P-VFBGA67-0608-0.80-001 (Weight: 0.101 g typ.) - 8 bit ECC for each 512Byte is required. 2013-09-20C PIN ASSIGNMENT (TOP VIEW) NC NC NC NC NC B NC WP ALE VSS CE WE RY/BY NC C NC NC RE CLE NC NC NC...