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TH58NVG3D4BTG00 Datasheet

8 Gbit (1024m X 8 Bit) CMOS Nand E2prom

Manufacturer: Toshiba

TH58NVG3D4BTG00 Overview

The device has a 2112-byte static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: The TH58NVG3D4B is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TH58NVG3D4BTG00 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read
  • Mode control Serial input/output mand control
  • Number of valid blocks Max 4096 blocks
  • Power supply VCC = 2.7 V to 3.6 V
  • Program/Erase Cycles 10000 Cycles (With 4bit/528Byte ECC)
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (50 ns cycle)
  • Package TH58NVG3D4BTG00 TSOP I 48-P-1220-0.50

TH58NVG3D4BTG00 Distributor