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TH58NVG2S3BTG00 Datasheet

4-gbit CMOS Nand Eprom

Manufacturer: Toshiba

TH58NVG2S3BTG00 Overview

The device has a 2112-byte static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TH58NVG2S3B is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TH58NVG2S3BTG00 Key Features

  • Package TH58NVG2S3BTG00 TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) Lead-Free

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TH58NVG2S3BTG00 Distributor