ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 7.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION
IM3(MIN.)= -45.
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