TIM7785-60SL Datasheet | Toshiba

FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1d B= 48.0d Bm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1d B= 7.5d B at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3(MIN.)= -45d Bc at Pout= 36.5d Bm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1d B G1d B IDS1 G VDS= 10V IDSset= 9.5A f= 7.7 to 8.5GHz UNIT d Bm d B A d B Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 36.5d Bm, f= 5MHz d Bc (Single Carrier Level) (VDS  IDS  Pin - P1d B)  Rth(c-c) °C Remended Gate Resistance(Rg): 28  MIN. 47.0 5.0    -42   TYP. MAX. 48.0   13.2 15.0  0.8  -45...