TIM7785-60ULA Datasheet | Toshiba

MICROWAVE POWER GaAs FET Features ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1dB= 7.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3(MIN.)= -25dBc at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.5A f= 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test...