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MICROWAVE POWER GaAs FET
TIM7785-60ULA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 7.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION
IM3(MIN.)= -25dBc at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 9.5A f= 7.7 to 8.
TIM7785-60ULA Datasheet
