Datasheet4U Logo Datasheet4U.com

TIM7785-25UL - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ŋBROAD BAND.

📥 Download Datasheet

Datasheet preview – TIM7785-25UL

Datasheet Details

Part number TIM7785-25UL
Manufacturer Toshiba
File Size 307.19 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM7785-25UL Datasheet
Additional preview pages of the TIM7785-25UL datasheet.

📁 Similar Datasheet

  • TIM7785-16 - MICROWAVE POWER GAAS FET (Toshiba Semiconductor)
  • TIM7785-16UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM7785-4UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM-LC - GPS Receiver (uBlox)
  • TIM-LH - GPS Receiver Module (uBlox)
  • TIM1011-2L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-4L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-8L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1414-5-252 - POWER GAAS FET (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
MICROWAVE POWER GaAs FET TIM7785-25UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 44.5dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 33.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 5.2A f= 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 33.
Published: |