TIM7785-25UL - MICROWAVE POWER GaAs FET

Toshiba

Key Features

ŋBROAD BAND.

TIM7785-25UL microwave power gaas fet by Toshiba - Datasheet Preview

Datasheet Details

Part number	TIM7785-25UL
Manufacturer	Toshiba
File Size	307.19 KB
Description	MICROWAVE POWER GaAs FET
Datasheet	TIM7785-25UL Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TIM7785-16	MICROWAVE POWER GAAS FET	Toshiba Semiconductor
TIM7785-16UL	MICROWAVE POWER GaAs FET	Toshiba Semiconductor
TIM7785-4UL	MICROWAVE POWER GaAs FET	Toshiba Semiconductor
TIM-LC	GPS Receiver	uBlox
TIM-LH	GPS Receiver Module	uBlox

Other Datasheets by Toshiba

Part Number	Description
TIM7785-12UL	MICROWAVE POWER GaAs FET
TIM7785-30UL	MICROWAVE POWER GaAs FET
TIM7785-35SL	MICROWAVE POWER GaAs FET
TIM7785-60SL	MICROWAVE POWER GaAs FET
TIM7785-60ULA	MICROWAVE POWER GaAs FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MICROWAVE POWER GaAs FET TIM7785-25UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 44.5dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 33.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 5.2A f= 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 33.