Datasheet Summary
MICROWAVE POWER GaAs FET
Features
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 44.5dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 33.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 5.2A f= 7.7 to 8.5GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test...