Datasheet4U Logo Datasheet4U.com

TIM7785-12UL - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ･BROAD BAND.

📥 Download Datasheet

Datasheet preview – TIM7785-12UL

Datasheet Details

Part number TIM7785-12UL
Manufacturer Toshiba
File Size 365.89 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM7785-12UL Datasheet
Additional preview pages of the TIM7785-12UL datasheet.

📁 Similar Datasheet

  • TIM7785-16 - MICROWAVE POWER GAAS FET (Toshiba Semiconductor)
  • TIM7785-16UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM7785-4UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM-LC - GPS Receiver (uBlox)
  • TIM-LH - GPS Receiver Module (uBlox)
  • TIM1011-2L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-4L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-8L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1414-5-252 - POWER GAAS FET (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 41.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-12UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 2.6A f = 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test Po= 30.
Published: |