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TIM7785-60SL - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ŋBROAD BAND.

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Datasheet Details

Part number TIM7785-60SL
Manufacturer Toshiba
File Size 318.65 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM7785-60SL Datasheet
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Full PDF Text Transcription

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MICROWAVE POWER GaAs FET TIM7785-60SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1dB= 7.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3(MIN.)= -45dBc at Pout= 36.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.5A f= 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 36.
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