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TK12P50W - N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK12P50W
Manufacturer	Toshiba
File Size	273.83 KB
Description	N-Channel MOSFET
Datasheet	TK12P50W-Toshiba.pdf

TK12P50W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12P50W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (N.

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Published: Dec 9, 2020 |