TK17E80W mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 t.
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Supe.
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