TK17E80W - Silicon N-Channel MOSFET

Name: TK17E80W
SKU: TK17E80W-1394962

Toshiba

The TK17E80W by Toshiba is a Silicon N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TK17E80W
Manufacturer	Toshiba
File Size	418.57 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK17E80W-Toshiba.pdf
Additional preview pages of the TK17E80W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85 mA) 3. Packaging and Internal Circuit TK17E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power.

📁 TK17E80W Similar Datasheet

Other Datasheets by Toshiba

Published: Jul 30, 2019 |