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TK20D60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK20D60U
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
10.0 ± 0.3 9.5 ± 0.2 A Ф3.65 ± 0.2 3.2 2.8
Unit: mm
0.6±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 190 144 20 19 150 −55 to 150 A W mJ A mJ °C °C Unit
1.1 ± 0.15 2.8 MAX. 12.8 ± 0.5 4.5 ± 0.2
9.0 0.62 ± 0.15
15.0 ± 0.3 0.75 ± 0.25 + 0.25 0.57 − 0.10 2.53 ± 0.2
V V
Ф0.2 M A 2.54 2.
TK20D60U Datasheet
