Datasheet Summary
MOSFETs Silicon N-Channel MOS (DTMOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S)
TO-220
2012-02-06 Rev.1.0
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