TK20E60U - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ. ) High forward transfer admittance: |Yfs| = 12 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 1 2012-02-06 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ TK20E60U 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics.

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Published: Nov 3, 2013 |