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TK20E60U Datasheet

The TK20E60U is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberTK20E60U
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK20E60U，ITK20E60U ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.19Ω. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% av.
*Low drain-source on-resistance: RDS(on) ≤0.19Ω.
*Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .
Part NumberTK20E60U
DescriptionSilicon N-Channel MOSFET
ManufacturerToshiba
Overview TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forw. (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain .

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