TK22E10N1
TK22E10N1 is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature
(Tc = 25)
(t = 1 ms) (Tc = 25)
(Note 1) (Note 1,2) (Note 1)
(Note 3)
VDSS VGSS
ID ID IDP PD EAS IAR Tch Tstg
±20
48 m J
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of mercial production
2012-01
2014-06-30
Rev.4.0
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted with heatsink so that Rth(ch-a) bees 4.16/W. Note 3: VDD = 80 V, Tch = 25 (initial), L = 77.6 µH, IAR = 22 A
Symbol
Rth(ch-c) Rth(ch-a)
Max
Unit
/W...
