TK25A60X
TK25A60X is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque
(Tc = 25) (t = 1.0 s)
(Note 1) (Note 1)
(Note 2)
(Note 1) (Note 1)
VDSS VGSS
ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR
600 ±30 25 100 45 348 6.2 25 100 150 -55 to 150 2000 0.6
W m J A
V Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of mercial production
2014-06
1 2014-05-12 Rev.2.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 15.8 m H, RG = 25 Ω, IAR = 6.2 A
Symbol
Rth(ch-c) Rth(ch-a)
Max Unit
2.78 /W 62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled...
