TK25S06N1L - N-channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK25S06N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2020-06-24 Rev.4.0 TK25S06N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless o.

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Published: Aug 20, 2020 |