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TK290A60Y Datasheet - Toshiba

TK290A60Y Silicon N-Channel MOSFET

TK290A60Y Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Rating

TK290A60Y Datasheet (448.61 KB)

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Datasheet Details

Part number:

TK290A60Y

Manufacturer:

Toshiba ↗

File Size:

448.61 KB

Description:

Silicon n-channel mosfet.

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TK290A60Y Silicon N-Channel MOSFET Toshiba

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