900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

TK31N60X Datasheet

Silicon N-Channel MOSFET

No Preview Available !

MOSFETs Silicon N-Channel MOS (DTMOS-H)
TK31N60X
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.)
by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
3. Packaging and Internal Circuit
TK31N60X
1: Gate
2: Drain (Heatsink)
3: Source
TO-247
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
TOR
600
±30
30.8
123
230
437
7.7
30.8
123
150
-55 to 150
0.8
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2013-10
1 2014-02-28
Rev.3.0


Toshiba Electronic Components Datasheet

TK31N60X Datasheet

Silicon N-Channel MOSFET

No Preview Available !

5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 12.9 mH, RG = 25 , IAR = 7.7 A
TK31N60X
Symbol
Rth(ch-c)
Rth(ch-a)
Max
0.543
50
Unit
/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-02-28
Rev.3.0


Part Number TK31N60X
Description Silicon N-Channel MOSFET
Maker Toshiba
Total Page 10 Pages
PDF Download

TK31N60X Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TK31N60W Silicon N-Channel MOS
Toshiba
2 TK31N60W5 MOSFETs
Toshiba Semiconductor
3 TK31N60X Silicon N-Channel MOSFET
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy