Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS- -H)
1. Applications
- High-Efficiency DC-DC Converters
- Switching Voltage Regulators
- Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TO-220SIS
1: Gate 2: Drain 3: Source
©2017-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-01
2021-01-27 Rev.2.0
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