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TK80F06K3L Datasheet, Toshiba

TK80F06K3L mos equivalent, silicon n-channel mos.

TK80F06K3L Avg. rating / M : 1.0 rating-12

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TK80F06K3L Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V.

Application


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* Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) .

Image gallery

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TAGS

TK80F06K3L
Silicon
N-channel
MOS
Toshiba

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