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TK80F08K3 - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK80F08K3 TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-06 2020-06-12 Rev.2.0 TK80F08K3 4. Absolute Maximum Ratings (Note) (Ta = 25 unless oth.

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Datasheet Details

Part number TK80F08K3
Manufacturer Toshiba
File Size 367.23 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK80F08K3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS) TK80F08K3 1. Applications • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK80F08K3 TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-06 2020-06-12 Rev.2.0 TK80F08K3 4.