TK80F06K3L - Silicon N-channel MOS

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Toshiba

Part number	TK80F06K3L
Manufacturer	Toshiba
File Size	311.35 KB
Description	Silicon N-channel MOS
Datasheet	TK80F06K3L Datasheet
Additional preview pages of the TK80F06K3L datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ener.

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Published: Nov 11, 2013 |