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Toshiba Electronic Components Datasheet

TLP151 Datasheet

Photocouplers Photorelay

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TOSHIBA Photocoupler IRED + Photo IC
TLP151
Industrial Inverter
MOS FET / IGBT Gate Driver
IH(Induction Heating)
Operate at high ambient temperatures up to 110°C
The Toshiba TLP151 consists of an infrared LED and integrated high gain,
high-speed photodetectors. The TLP151 is housed in the SO6 package.
The photodetector has an internal Faraday shield that provides a guaranteed
common-mode transient immunity of ±15 kV/μs. TLP151 is suitable for direct
gate driving circuit for IGBTs or power MOSFETs.
654
1
3
3.7 ± 0.15
TLP151
Unit: mm
7.0 ± 0.4
Buffer logic type (Totem pole output)
Package type: SO6
Peak Output Current : IOP = ±0.6 A (max)
Guaranteed performance over temperature: -40 to 110°C
Power supply voltage: 10 to 30 V
Threshold Input Current: IFLH = 5.0 mA (max)
Propagation delay time : tpLH / tpHL = 700 ns (max)
Common mode transient immunity : ±15 kV/μs min
Isolation voltage
: 3750 Vrms (min)
UL-recognized : UL 1577, File No.E67349
cUL-recognized : CSA Component Acceptance Service No.5A
File No.E67349
VDE-approved EN 60747-5-5 ,EN 62368-1 (Note 1)
0.4
1.27
2.54
0.5 min
JEDEC
JEITA
TOSHIBA
11-4L1
Weight: 0.08 g (typ.)
Pin Configuration (Top View)
1
3
SHIELD
6
1: ANODE
3: CATHODE
5
4: GND
5: VO (Output)
6: VCC
4
Note 1 : When a VDE approved type is needed,
please designate the Option(V4).
Truth Table
Input
H
L
LED
ON
OFF
M1
ON
OFF
M2
OFF
ON
Output
H
L
Construction Mechanical Ratings
Creepage distance
Clearance distance
Insulation thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
Schematic
IF
1+
VF
3
SHIELD
(M1)
ICC 6
VCC
IO 5
(M2)
VO
4
GND
Start of commercial production
2009-10
© 2019
1
Toshiba Electronic Devices & Storage Corporation
2019-10-10


Toshiba Electronic Components Datasheet

TLP151 Datasheet

Photocouplers Photorelay

No Preview Available !

Absolute Maximum Ratings (Ta = 25 °C)
TLP151
Characteristic
Symbol
Rating
Unit
Forward Current
Forward Current Derating (Ta 95°C)
Peak Transient Forward Current
(Note 1)
Peak Transient Forward Current Derating (Ta 95°C)
Diode Power Dissipation
Diode Power Dissipation Derating (Ta 95°C)
IF
ΔIF /°C
IFPT
ΔIFPT /°C
PD
ΔPD/ΔTa
25
-0.67
50
-1.34
40
-1.3
mA
mA/°C
mA
mA/°C
mW
mW/°C
Reverse Voltage
“H” Peak Output Current
(Note 2)
“L” Peak Output Current
(Note 2)
Output Voltage
Supply Voltage
Output Power Dissipation
Output Power Dissipation Derating (Ta 95°C)
VR
IOPH
IOPL
VO
VCC
PO
ΔPO/ΔTa
5
V
-0.6
A
0.6
A
35
V
35
V
80
mW
-2.0
mW/°C
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (10 s)
Isolation Voltage (AC,60 s, R.H.60 %)
(Note 3)
Topr
Tstg
Tsol
BVS
-40 to 110
-55 to 125
260
3750
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc.).
Note 1: Pulse width 1 ms, duty = 50 %.
Note 2: Exponential waveform pulse width PW 2 μs, f 10 kHz
Note 3: This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Input Current, High Level (Note 1)
IFLH
7.5
Input Voltage, Low Level
VFHL
0
Supply Voltage
(Note 2)
VCC
10
Peak output current
IOPH/ IOPL
-
Operating Temperature
Topr
-40
-
15
mA
-
0.8
V
-
30
V
-
±0.2
A
-
110
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 1: Input signal rise time (fall time) < 0.5 μs.
Note 2: This item denotes operating range, not meaning of recommended operating conditions. A steep rising
slope of the VCC may cause an unstable operation of the device. Therefore please design the VCC rise slope
under 3.0 V/μs.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-10-10


Part Number TLP151
Description Photocouplers Photorelay
Maker Toshiba
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TLP151 Datasheet PDF






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