Absolute Maximum Ratings (Ta = 25°C)
TLP798GA
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 25°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥ 25°C)
Junction temperature
Off-state output terminal voltage
On-state RMS current
On-state current derating (Ta ≥ 25°C)
A connection
B connection
C connection
A connection
B connection
C connection
A connection
IF
ΔIF / °C
IFP
VR
PD
ΔPD /°C
Tj
VOFF
ION
ΔION / °C
30
mA
-0.3
mA / °C
1
A
5
V
50
mW
-0.5
mW/°C
125
°C
400
V
150
200
mA
300
-1.5
-2.0
mA / °C
-3.0
270
Output power dissipation
B connection
PO
C connection
135
mW
270
A connection
-2.7
Output power dissipation derating (Ta ≥ 25°C) B connection
ΔPO / °C
-1.35
mW / °C
C connection
-2.7
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 60 s, R.H. ≤ 60 %)
(Note 1)
Tj
Tstg
Topr
Tsol
BVS
125
-55 to 125
-40 to 85
260
5000
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
On-state current
Operating temperature
VDD
IF
ION
Topr
—
—
320
V
5
7.5
20
mA
—
—
150 mA
-20
—
80
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24
