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TMM2015BP-15 - Static RAM

Download the TMM2015BP-15 datasheet PDF. This datasheet also covers the TMM2015BP-90 variant, as both devices belong to the same static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TMM2015BP is a 16, 384 bits high speed and low power static random access memory organized as 2, 048 words by 8 bits and operates from a single 5V supply.

Features

  • with a maximum access time of 90ns/ 100ns/120ns/150ns and maximum operating current of 50mA. When CS is a logical high, the device is placed In a low power standby mode in which maximum standby current is 5mA. Thus the TMM201 nBP IS most sUitable for use In microcomputer oenpheral memory where the low power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TMM2015BP-90-Toshiba.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCTS 2,048 WORD X 8 BIT STATIC RAM TMM2015BP-90, TMM2015BP-12 SILICON MONOLITHIC TMM2015BP-10, TMM2015BP-15N-CHANNEL SILICON GATE MOS PROCESS DESCRIPTION The TMM2015BP is a 16, 384 bits high speed and low power static random access memory organized as 2, 048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 90ns/ 100ns/120ns/150ns and maximum operating current of 50mA. When CS is a logical high, the device is placed In a low power standby mode in which maximum standby current is 5mA. Thus the TMM201 nBP IS most sUitable for use In microcomputer oenpheral memory where the low power applications are required.
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