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TOSHIBA Transistor Silicon NPN Epitaxial Type
TPC6502
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
TPC6502
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEX
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC Collector current
IC
3.0
A
Pulse
ICP
5.0
Base current
IB
300
mA
Collector power dissipation
DC t = 10 s
0.8 PC (Note 1)
1.6
W
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.01 g (typ.
TPC6502 Datasheet
