* (1) High-speed switching (2) Small gate charge: QSW = 6.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit
TPH11006NL Datasheet (235.50 KB)
TPH11006NL
235.50 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH11006NL 1. Applications Switching Voltage Regulators DC-DC Converters Motor .
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