Datasheet4U Logo Datasheet4U.com

TPH1110FNH - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 4.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 95 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH1110FNH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source volta.

📥 Download Datasheet

Datasheet Details

Part number TPH1110FNH
Manufacturer Toshiba
File Size 230.42 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPH1110FNH Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPH100A Current Transducers Topstek
TPH10A-LTC Current Transducers Topstek
TPH12.5A-LTC Current Transducers Topstek
TPH1205D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER
TPH1205DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER

Other Datasheets by Toshiba

Part Number Description
TPH1110ENH Silicon N-channel MOSFET
TPH11003NL MOSFETs
TPH11006NL Silicon N-channel MOSFET
TPH12008NH Silicon N-Channel MOSFET
TPH14006NH MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1110FNH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 4.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH1110FNH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.