* (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 8.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packagi
TPH12008NH Datasheet (294.91 KB)
TPH12008NH
294.91 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) TPH12008NH 1. Applications DC-DC Converters Switching Voltage Regulators Mo.
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