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TPH1R403NL - Silicon N-channel MOSFET

Features

  • (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ. ) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH1R403NL 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source vol.

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Datasheet Details

Part number TPH1R403NL
Manufacturer Toshiba
File Size 235.81 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPH1R403NL Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1R403NL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH1R403NL 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
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