* (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit
TPH1R403NL Datasheet (235.81 KB)
TPH1R403NL
235.81 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1R403NL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators .
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