TPH1R403NL Datasheet | Toshiba

es (1) High-speed switching (2) Small gate charge: QSW = 10.6 n C (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 m A) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) Drain current (DC) Drain current (pulsed) (Silicon limit) (Tc = 25 ) (t = 1 ms) (Note 1), (Note 2) (Note 1) (Note 1) ID ID IDP 150 A 60 200 Power dissipation Power dissipation Power dissipation (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) PD PD PD 64 W 2.8 1.6 Single-pulse avalanche energy Avalanche current Channel temperature (Note 5) EAS IAR Tch 355 m J 60 A 150  Storage temperature Tstg -55 to...