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Toshiba Electronic Components Datasheet

TPH2900ENH Datasheet

Silicon N-channel MOSFET

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH2900ENH
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 8.2 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 24 m(typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V)
(5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPH2900ENH
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 200 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
36 A
Drain current (DC)
(Continuous)
(Note 1)
ID
33
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
102
Power dissipation
(Tc = 25 )
PD 78 W
Power dissipation
(t = 10 s)
(Note 3)
PD
2.8
Power dissipation
(t = 10 s)
(Note 4)
PD
1.6
Single-pulse avalanche energy
(Note 5)
EAS
176 mJ
Avalanche current
IAR 33 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-10-02
Rev.1.0


Toshiba Electronic Components Datasheet

TPH2900ENH Datasheet

Silicon N-channel MOSFET

No Preview Available !

5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
(Tc = 25 )
(t = 10 s)
(Note 3)
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 4)
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Limited by silicon chip capability.
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: VDD = 60 V, Tch = 25 (initial), L = 250 µH, IAR = 33 A
TPH2900ENH
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max Unit
1.60 /W
44.6
78.1
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-10-02
Rev.1.0


Part Number TPH2900ENH
Description Silicon N-channel MOSFET
Maker Toshiba
Total Page 9 Pages
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