* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 4.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit
TPH6R003NL Datasheet (231.98 KB)
TPH6R003NL
231.98 KB
Mosfet.
TPH6R003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPH6R003NL 1. Applications Switching Voltage Regulators DC-DC Converters 2. .
📁 Related Datasheet
TPH6R004PL Silicon N-channel MOSFET (Toshiba)
TPH60A-LTC Current Transducers (Topstek)
TPH6400ENH Silicon N-channel MOSFET (Toshiba)
TPH0303DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0305DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0503DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0505D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0505DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0505S 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0509D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
