TPN22006NH - MOSFET

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Toshiba

Part number	TPN22006NH
Manufacturer	Toshiba
File Size	225.04 KB
Description	MOSFET
Datasheet	TPN22006NH Datasheet
Additional preview pages of the TPN22006NH datasheet.

(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 1 2012-08 2014-01-07 Rev.2.0 TPN22006NH 4. Absolute Maximum Ratings (N.

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Published: Aug 29, 2014 |