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TPN2010FNH - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN2010FNH TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1 2013-10-22 Rev.1.0 TPN2010FNH 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symb.

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Datasheet Details

Part number TPN2010FNH
Manufacturer Toshiba
File Size 229.44 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPN2010FNH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPN2010FNH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN2010FNH TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1 2013-10-22 Rev.1.0 TPN2010FNH 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 9.