TPN2010FNH
TPN2010FNH is Silicon N-channel MOSFET manufactured by Toshiba.
Features
(1) High-speed switching (2) Small gate charge: QSW = 2.6 n C (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 m A)
3. Packaging and Internal Circuit
TSON Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
1 2013-10-22 Rev.1.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 250 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
9.9 A
Drain current (DC)
(Continuous)
(Note 1)
Drain current (pulsed)
(t = 1 ms)
(Note 1)
Power dissipation
(Tc = 25 )
PD 39 W
Power dissipation
(t = 10 s)
(Note 3)
Power dissipation
(t = 10 s)
(Note 4)
Single-pulse avalanche...
