TPN22006NH
TPN22006NH is MOSFET manufactured by Toshiba.
Features
(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 n C (typ.) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 m A)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
Start of mercial production
2012-08 2014-01-07 Rev.2.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Silicon limit) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 60 ±20 21 9 42 18 1.9 0.7 21 9 150 -55 to 150 W W W m J A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 6.94 65.7 178 Unit /W /W /W
Note 1: Ensure that the channel temperature does not...
