TPW1R104PB
TPW1R104PB is N-channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 m A)
3. Packaging and Internal Circuit
DSOP Advance(WF)M
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-08
2020-06-24 Rev.8.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation
(Tc = 25 ) (t = 10 s)
(Note 1) (Note 1) (Note 6) (Note 2)
VDSS VGSS
ID IDP PD
±20
Power dissipation
(t = 10 s)
(Note 3)
Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature
(Note 4)
(Note 5)
Tch
(Note 5)
Tstg
140 m J
-55 to...
