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TPW1R104PB - N-channel MOSFET

Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPW1R104PB DSOP Advance(WF)M 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-08 2020-06-24 Rev.8.0 TPW1R104PB 4. Absolute.

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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPW1R104PB 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPW1R104PB DSOP Advance(WF)M 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-08 2020-06-24 Rev.8.0 TPW1R104PB 4.
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