TPW2900ENH
TPW2900ENH is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) High-speed switching (2) Small gate charge: QSW = 8.2 n C (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 m A)
3. Packaging and Internal Circuit
DSOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2015-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2015-08
2019-10-30 Rev.3.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25 )
(Note 1)
(Bottom drain)
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
Drain current (pulsed)
(t = 100 µs)
(Note 1)
Power dissipation
(Tc = 25 ) (Bottom drain)
Power dissipation
(Note...
