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TPWR6003PL - Silicon N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ. ) (3) Small output charge: Qoss = 81.3 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.36 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPWR6003PL DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial.

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Datasheet Details

Part number TPWR6003PL
Manufacturer Toshiba
File Size 513.90 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPWR6003PL Datasheet

Full PDF Text Transcription for TPWR6003PL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPWR6003PL. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-channel MOS (U-MOS-H) TPWR6003PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching...

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rs • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.36 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPWR6003PL DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-03 2019-10-21 Rev.4.0 TPWR6003PL 4.

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