TPWR6003PL
Features
(1) High-speed switching (2) Small gate charge: QSW = 30 n C (typ.) (3) Small output charge: Qoss = 81.3 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.36 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 m A)
3. Packaging and Internal Circuit
DSOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-03
2019-10-21 Rev.4.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
(Note 1)
VGSS
±20
Drain current (DC)
(Tc = 25 )
(Note 2)
(Bottom drain)
Drain current (DC)
(Silicon limit) (Note 2), (Note 3)
Drain current (pulsed)
(t = 100 µs)
(Note 2)
Power dissipation
(Tc = 25 ) (Bottom...
