TRS10A65C Datasheet SiC Schottky Barrier Diode

Manufacturer: Toshiba

Datasheet Details

SiC Schottky Barrier Diode TRS10A65C 1.

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.

(1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V 3. Packaging and Internal Circuit Pin Assignment TRS10A65C 1: Cathode 2: Anode TO-220F-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque VRRM IF(DC) IFP I2t Tj.

Brand Logo	Part Number	Description	Manufacturer
	TRS10A65F	SiC Schottky Barrier Diode	INCHANGE