Datasheet4U.com

TRS10A65C - SiC Schottky Barrier Diode

Toshiba

📥 Download Datasheet

TRS10A65C Datasheet Preview — Preview of TRS10A65C PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TRS10A65C
Manufacturer	Toshiba
File Size	170.51 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS10A65C-Toshiba.pdf

TRS10A65C Product details

Features

(1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V 3. Packaging and Internal Circuit Pin Assignment TRS10A65C 1: Cathode 2: Anode TO-220F-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque VRRM IF(DC) IFP I2t Tj.

📁 TRS10A65C Similar Datasheet

TRS10A65F - SiC Schottky Barrier Diode (INCHANGE)
TRS1-0MCR00V - Thermal Reed Switch (KEMET)
TRS1-0MCR01V - Thermal Reed Switch (KEMET)
TRS1-0MLR00V - Thermal Reed Switch (KEMET)
TRS1-0MSR01EV - Thermal Reed Switch (KEMET)
TRS1-100MCR00V - Thermal Reed Switch (KEMET)
TRS1-100MCR01V - Thermal Reed Switch (KEMET)
TRS1-100MLR00V - Thermal Reed Switch (KEMET)

Other Datasheets by Toshiba

TRS10E65C - SiC Schottky Barrier Diode
TRS10E65F - SiC Schottky Barrier Diode
TRS10E65H - SiC Schottky Barrier Diode
TRS10V65H - SiC Schottky Barrier Diode
TRS12A65F - SiC Schottky Barrier Diode
TRS12E65H - SiC Schottky Barrier Diode

Published: Dec 9, 2020 |