TRS10A65F - SiC Schottky Barrier Diode

Inchange Semiconductor

Key Features

Forward DC current IF(DC) = 10 A.
Repetitive peak reverse voltage VRRM = 650 V.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

TRS10A65F sic schottky barrier diode by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	TRS10A65F
Manufacturer	Inchange Semiconductor
File Size	230.37 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS10A65F Datasheet

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SiC Schottky Barrier Diode FEATURES ·Forward DC current IF(DC) = 10 A ·Repetitive peak reverse voltage VRRM = 650 V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC Converters ·Uninterruptible Power Supplies ·Solar Inverters ·Power Factor Correction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage IF(DC) Forward DC current TJ Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 650 V 10 A 175 ℃ -55~175 ℃ MAX UNIT 3.92 ℃/W TRS10A65F isc website：www.iscsemi.