TRS10A65F
TRS10A65F is SiC Schottky Barrier Diode manufactured by Inchange Semiconductor.
FEATURES
- Forward DC current
IF(DC) = 10 A
- Repetitive peak reverse voltage
VRRM = 650 V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- DC-DC Converters
- Uninterruptible Power Supplies
- Solar Inverters
- Power Factor Correction
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
IF(DC)
Forward DC current
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
℃
-55~175 ℃
MAX UNIT 3.92 ℃/W
TRS10A65F isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
Si C Schottky Barrier Diode
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
UNIT...
