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TRS10A65F - SiC Schottky Barrier Diode

Key Features

  • (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ. ) (4) The reverse current is small. : IR = 0.5 µA (Typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS10A65F TO-220F-2L 1: Cathode 2: Anode ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-11 2020-09-28 Rev.6.0 TRS10A65F 4. Absolute Maximum Ratings (Note) (Unless otherwise.

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Datasheet Details

Part number TRS10A65F
Manufacturer Toshiba
File Size 272.96 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS10A65F Datasheet

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Full PDF Text Transcription (Reference)

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SiC Schottky Barrier Diode TRS10A65F 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS10A65F TO-220F-2L 1: Cathode 2: Anode ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-11 2020-09-28 Rev.6.0 TRS10A65F 4.