TRS10A65F Datasheet | Toshiba

Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance is small : Cj = 36 p F (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TO-220F-2L 1: Cathode 2: Anode ©2016-2020 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2016-11 2020-09-28 Rev.6.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current VRRM IF(DC) Forward pulse current (Note 1) Non-repetitive peak forward surge current IFSM (Note 2) I2t limit value I2t A2s Junction temperature Tj  Storage temperature Mounting torque Tstg TOR -55 to 175 0.6  Nm Isolation voltage(t=1.0s) Vdis...