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TRS10A65C - SiC Schottky Barrier Diode

Key Features

  • (1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V 3. Packaging and Internal Circuit Pin Assignment TRS10A65C 1: Cathode 2: Anode TO-220F-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque VRRM IF(DC) IFP I2t Tj.

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Datasheet Details

Part number TRS10A65C
Manufacturer Toshiba
File Size 170.51 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS10A65C Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode TRS10A65C 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V 3. Packaging and Internal Circuit Pin Assignment TRS10A65C 1: Cathode 2: Anode TO-220F-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque VRRM IF(DC) IFP I2t Tj Tstg Vdis TOR Note 1 Note 2 650 10 100 12.5 175 -55 to 175 2000 0.6 V A A2s  V Nm Note: Using continuously under heavy loads (e.g.