TRS10A65C Datasheet | Toshiba

Features (1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V 3. Packaging and Internal Circuit Pin Assignment 1: Cathode 2: Anode TO-220F-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque VRRM IF(DC) IFP I2t Tj Tstg Vdis TOR Note 1 Note 2 650 10 100 12.5 175 -55 to 175 2000 0.6 A2s  V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 100 µs Note 2: f = 50 Hz Start of mercial production 2014-02 2014-04-21 Rev.2.0 5. Thermal Characteristics Characteristics Thermal resistance (junction-to-case) Thermal resistance (junction-to-ambient) Symbol Rth(j-c)  Rth(j-a)  Test Condition 6. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Max Unit 3.92 /W 62.5 Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance 7. Marking Symbol Test Condition VFM(1) VFM(2) IRRM Cj IF = 5 A (pulse measurement) IF = 10 A (pulse measurement) VRRM = 650 V (pulse measurement) VR = 650 V, f = 1...