TTB1020B
TTB1020B is Silicon PNP Transistors manufactured by Toshiba.
Bipolar Transistors Silicon PNP Triple-Diffused Type
1. Applications
- High-Current Switching
- Hammer Drivers
2. Features
(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) plementary to TTD1415B
3. Packaging and Internal Circuit
TO-220SIS
1. Base 2. Collector 3. Emitter
©2015-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2012-09
2020-01-29 Rev.4.0
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