* (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015-2020 Toshiba Electroni
TTB1020B Datasheet (207.04 KB)
TTB1020B
207.04 KB
Silicon pnp transistors.
Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B 1. Applications High-Current Switching Hammer Drivers 2. .
📁 Related Datasheet
TTB1067B Silicon PNP Transistors (Toshiba)
TTB115N08A 80V N-Channel Trench MOSFET (Unigroup)
TTB115N08AA 85V N-Channel Trench MOSFET (Unigroup)
TTB135N68A 68V N-Channel Trench MOSFET (Unigroup)
TTB145N08A 85V N-Channel Trench MOSFET (Unigroup)
TTB0503-1T DC/DC Converter (MORNSUN)
TTB0505-1T DC/DC Converter (MORNSUN)
TTB0509-1T DC/DC Converter (MORNSUN)
TTB50-3T Termination - Tab & Cover (TTB Series) (American Accurate Components)
TTB6C135N16 Phase Control Thyristor (eupec)
