TTB1020B transistors equivalent, silicon pnp transistors.
(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Com.
* High-Current Switching
* Hammer Drivers
2. Features
(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , I.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 207.04KB)