Datasheet4U Logo Datasheet4U.com

TTB1020B Datasheet Silicon PNP Transistors

Manufacturer: Toshiba

Overview: Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B 1. Applications • High-Current Switching • Hammer Drivers 2.

Key Features

  • (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-09 2020-01-29 Rev.4.0 TTB1020B 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Sym.

More Datasheets from Toshiba

Part Number Description
TTB1067B Silicon PNP Transistors

TTB1020B Distributor