TTB1020B - Silicon PNP Transistors

Product Overview

Toshiba

Part number	TTB1020B
Manufacturer	Toshiba
File Size	207.04 KB
Description	Silicon PNP Transistors
Datasheet	TTB1020B Datasheet
Additional preview pages of the TTB1020B datasheet.

(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-09 2020-01-29 Rev.4.0 TTB1020B 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Sym.

📁 Similar Datasheet

TTB115N08A - 80V N-Channel Trench MOSFET (Unigroup)
TTB115N08AA - 85V N-Channel Trench MOSFET (Unigroup)
TTB135N68A - 68V N-Channel Trench MOSFET (Unigroup)
TTB145N08A - 85V N-Channel Trench MOSFET (Unigroup)
TTB0503-1T - DC/DC Converter (MORNSUN)
TTB0505-1T - DC/DC Converter (MORNSUN)
TTB0509-1T - DC/DC Converter (MORNSUN)
TTB50-3T - Termination - Tab & Cover (TTB Series) (American Accurate Components)

Other Datasheets by Toshiba

Published: Apr 21, 2024 |